ICS 31.080
H 80/84
团体 标准
T/CASA S 009—2019
半绝缘碳化硅材料中痕量杂质浓度及分布的二次
离子质谱检测方法
Determination of Trace Impurities Concentration and Distribution in
Semi -insulating SiC Materials by Secondary Ion Mass Spe ctrometry
版本:V01.00
2019-11-25发布 2019-11-25实施
第三代半导体产业技术创新战略联盟 发布
全国团体标准信息平台
全国团体标准信息平台
T/CASA S 009-2019
I 目 录
前 言 ................................ ................................ ................................ ................................ ............................... I
1 范围 ................................ ................................ ................................ ................................ .............................. 1
2 规范性引用文件 ................................ ................................ ................................ ................................ .......... 1
3 术语和定义 ................................ ................................ ................................ ................................ .................. 1
4 方法原理 ................................ ................................ ................................ ................................ ...................... 1
5 干扰因素 ................................ ................................ ................................ ................................ ...................... 2
6 仪器及设备 ................................ ................................ ................................ ................................ .................. 2
6.1 质量分析器 ................................ ................................ ................................ .............................. 2
6.2 进样系统及控制台 ................................ ................................ ................................ .................. 2
6.3 真空系统 ................................ ................................ ................................ ................................ .. 2
7 试样准备 ................................ ................................ ................................ ................................ ...................... 3
7.1 标准样品 ................................ ................................ ................................ ................................ .. 3
7.2 空白样品 ................................ ................................ ................................ ................................ .. 3
7.3 测试样品 ................................ ................................ ................................ ................................ .. 3
8 操作步骤 ................................ ................................ ................................ ................................ ...................... 3
8.1 样品装载 ................................ ................................ ................................ ................................ .. 3
8.2 仪器调试 ................................ ................................ ................................ ................................ .. 3
8.3 分析条件 ................................ ................................ ................................ ................................ .. 3
8.4 样品分析 ................................ ................................ ................................ ................................ .. 3
9 结果计算 ................................ ................................ ................................ ................................ ...................... 4
9.1 相对灵敏度因子的计算 ................................ ................................ ................................ .......... 4
9.2 痕量杂质浓度的计算 ................................ ................................ ................................ .............. 4
10重复性和准确度 ................................ ................................ ................................ ................................ ......... 5
11 报告 ................................ ................................ ..................
T-CASAS 009—2019 半绝缘碳化硅材料中痕量杂质浓度及分布的二次离子质谱检测方法
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